لخّصلي

Reverse bias: If the negative from the power source in the circuit is connected to the p-doped segment, and the positive is connected to the n-doped segment, the positively charged holes on the p-side of the junction are attracted to its negative terminal; away from the depletion zone.The p-n junction still prevents electrical conduction as the mobile carriers are repelled from the depletion region.

Reverse bias: If the negative from the power source in the circuit is connected to the p-doped segment, and the positive is connected to the n-doped segment, the positively charged holes on the p-side of the junction are attracted to its negative terminal; away from the depletion zone. This allows more free electrons to move from the n side to the p side in the depletion region. Similarly, the negatively charged free electrons on the n side of the junction are attracted to the positive part; i.e. away from the depletion region. This allows more vacuoles to move from the p-side to the n-side in the depletion region. Therefore, the depletion layer becomes thicker and the electric field of the space charge becomes stronger. The p-n junction still prevents electrical conduction as the mobile carriers are repelled from the depletion region.