خدمة تلخيص النصوص العربية أونلاين،قم بتلخيص نصوصك بضغطة واحدة من خلال هذه الخدمة
This text introduces optoelectronics, a field merging electronics and light, focusing on its history and fundamentals. Key historical milestones include Henry Joseph Round's 1907 observation of electroluminescence in SiC, Oleg Losev's 1927 light emission from zinc oxide and silicon carbide diodes, the 1961 invention of the helium-neon laser (Javan), the 1962 invention of the visible LED (Holonyak), and the 1983 installation of the first fiber optic trunk line. Optoelectronics, experiencing 30% annual growth since 1992, is crucial in communications (fiber optics, laser systems), computing, entertainment, and defense (infrared imaging, radar). The text then explains fundamental concepts like light as an electromagnetic wave, characterized by frequency (υ) and wavelength (λ), and its speed (v) related to refractive index (n). Wave-particle duality, the Planck-Einstein relation (E=hυ), and the optical spectrum are described. Refraction, reflection, attenuation (power loss due to absorption and scattering), and dispersion (speed variation based on wavelength) are detailed, including Snell's law and total internal reflection (TIR). Finally, the chapter covers light sources (LEDs and laser diodes) and detectors (photodiodes, phototransistors, photoconductive detectors) used in optical communication systems, highlighting their characteristics and advantages over copper wire systems.
Critical Angle, φ1c , occurs at φ2=90 º, then
2
1
1
1.4
arcsin arcsin 76.5 º
1.
Light transmission, sources and detectors
In this chapter, main sources of light and detectors commonly used in optical
communication systems are presented. Optical communications offer important
advantages respect to conventional communications supported by copper wires.
Some of these advantages are introduced in this chapter.
Introduction
Optical communication systems transmit information by means of light. Compared
to copper wire used in electrical communications, optical fibres have lower cost,
weigh less, have less attenuation and dispersion and provide more bandwidth.
Optical fibre can support ultra-high data rates: Terabits per second and can be used
to transmit light and thus information over long distances. Moreover, there are no
problems associated to EMC (Electromagnetic Compatibility) interference
immunity and there is no fire hazard because of the pass of electricity through the
communication channel is eliminated.
Figure 5 shows the typical block diagram of an optical communication system. The
electrical signal (information) controls the source of light; the light emitted by the
source is coupled to the transmission channel: Optical fibre, waveguide or free
space. The light is transmitted through the transmission channel up to the light
detector that is coupled with the channel. The light detector transforms the light into
electrical signal and the information is received.
Fig. 5. Optical communication system bloc 2 Sources and detectors of light
LED : Light-emitting diode
Light sources are used to generate input signals of the optical communications
systems. Optical communication systems often use semiconductor optical sources
such as LEDs (light emitting diodes) and semiconductor LDs (laser diodes).
LASER : Light Amplification by Stimulated Emission and Radiation
These kinds of semiconductor optical devices offer high efficiency and reliability.
Moreover, they allow an accurate selection of the wavelength range and emissive
areas compatible with optical fibre core dimensions. The following table
summarizes main characteristics and structures of LEDs and LDs used in optical
communication systems through optical fibres.
Semiconductor optical
sources
Characteristics
Structures
LEDs
LEDs used in optical
communications must
have a high radiance
(light intensity), fast
response time and high
QE (quantum
efficiency).
Planar, dome, edgeemitting led or surfaceemitting led.
LDs
LDs used in optical
communications should
have coherent light,
narrow beam width and
high output power.
Spontaneous emission.
Stimulated emission
At the end of the optical communication systems optical sensors (detectors of light)
are used in order to recover the transmitted information and convert it again into an
electrical signal through the photoelectric effect. The role of a photodetector is to
recover the data transmitted through the optical fibre communication system.
Photodetectors are optoelectronic devices that convert an incident radiation (light)
to an electrical signal, such as voltage or current.
Light detectors or photodetectors are usually based on PDs (photodiodes),
photoconductive detectors and phototransistors. Photoconductive detectors have
the simplest structure of this family of light detectors and can be obtained by
attaching two metal electrodes to a semiconductor material. The conductivity of the
semiconductor increases when some incident photons are absorbed in the
semiconductor. As result, an increase of the external current appears when a voltage bias is applied to the electrodes. Solar cells are a specific type of photodetectors
used in photovoltaic solar energy generation systems, not in communication
systems.
A photodiode is a semiconductor diode that functions as a photodetector. It is a pn junction or p-i-n structure. When a photon of sufficient energy strikes the diode,
it excites an electron thereby creating a mobile electron and a positively charged
electron hole.
Phototransistors are BJTs (bipolar junction transistors) that operates as
photodetectors and offer as well photo-current gain. These devices are
semiconductor light sensors formed from a basic transistor with a transparent cover.
Semiconductor optical
detectors
Characteristics
Examples of structures
Photodiodes Based on pn junctions.
pn or p-i-n diodes. APDs
(Avalanche
photodiodes).
Heterojunction
photodiodes.
Schottky junction
Junction formed by an ntype semiconductor in
contact with a metal.
Schottky contacts.
Solar cells
Solar cells convert the
incident radiation energy
into electrical energy.
cSi ( crystalline silicon)
aSi:H (amporphous
silicon). HiT
(heterojunction intrinsic
layer thin film solar cell
). GaAs
Phototransistors
Light-sensitive
transistors.
Phototransistors amplify
variations in the light
striking it.
npn BJTs
pnp BJTs
Photoconductive
detectors
Conductivity variation
due to absorption of
light.
LDR (light-dependent
resistor). PbS ( lead
sulfide) IR ( infrared
detector). Lead selenide
(PbSe) IR detectors.
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