- ????These electrons will, then be attracted towards the collector because of its high
positive potential, passing through the collector junction (fig.2).The emitter-base junction
(the emitter junction) and the base-collector junction (the collector junction).Biasing a transistor
Forward bias is applied on the emitter junction with a value that exceeds the
knee voltage; many free electrons will enter the base, crossing the emitter junction.The variable parameters of this circuit are: IB.IC.VCE.VBE
The instantaneous value of these variables are :iSS,ic,VCE, Vbe
The independent variables of these are:iSS,VCE
The dependent variables are: ic, VBEISTICS
The transistor is a semiconductor crystal with three doped regions (NPN transistor
or PNP,fig.So
IE IC+IB with IB being very small it can be said that
IC=IE
Fig 2 is redrawn using the transistor symbol (this circuit is known as the common
base; since the base is common between the two circuits.The
emitter is heavily doped; its job is to emit, or inject, electrons into the base.The transistor is, thus, composed of two pn-junctions.????????????????: ? 1).