لخّصلي

Reverse bias: If the negative from the power source in the circuit is connected to the p-doped segment, and the positive is connected to the n-doped segment, the positively charged holes on the p-side of the junction are attracted to its negative terminal; away from the depletion zone.The p-n junction still prevents electrical conduction as the mobile carriers are repelled from the depletion region.Similarly, the negatively charged free electrons on the n side of the junction are attracted to the positive part; i.e. away from the depletion region.Then, this impulse overcomes the barrier, allowing electrons to cross over to the other side and fill in the gaps.

Reverse bias: If the negative from the power source in the circuit is connected to the
p-doped segment, and the positive is connected to the n-doped segment, the positively
charged holes on the p-side of the junction are attracted to its negative terminal; away
from the depletion zone. This allows more free electrons to move from the n side to
the p side in the depletion region. Similarly, the negatively charged free electrons on
the n side of the junction are attracted to the positive part; i.e. away from the depletion
region. This allows more vacuoles to move from the p-side to the n-side in the
depletion region. Therefore, the depletion layer becomes thicker and the electric field
of the space charge becomes stronger. The p-n junction still prevents electrical
conduction as the mobile carriers are repelled from the depletion region.
Forward bias: where the positive part of the power source is connected to the p
doped part, and the negative part is connected to the n-doped part, the free electrons
on the n side repel with the negative part, pushing them toward the middle of the
junction. Then, this impulse overcomes the barrier, allowing electrons to cross over to
the other side and fill in the gaps. The space charge and depletion layer melt and
forward current can flow.