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- ????These electrons will, then be attracted towards the collector because of its high positive potential, passing through the collector junction (fig.2).The emitter-base junction (the emitter junction) and the base-collector junction (the collector junction).Biasing a transistor Forward bias is applied on the emitter junction with a value that exceeds the knee voltage; many free electrons will enter the base, crossing the emitter junction.The variable parameters of this circuit are: IB.IC.VCE.VBE The instantaneous value of these variables are :iSS,ic,VCE, Vbe The independent variables of these are:iSS,VCE The dependent variables are: ic, VBEISTICS The transistor is a semiconductor crystal with three doped regions (NPN transistor or PNP,fig.So IE IC+IB with IB being very small it can be said that IC=IE Fig 2 is redrawn using the transistor symbol (this circuit is known as the common base; since the base is common between the two circuits.The emitter is heavily doped; its job is to emit, or inject, electrons into the base.The transistor is, thus, composed of two pn-junctions.????????????????: ? 1).
Original text
- النص المستخرج من الصورة: 📝
ISTICS
The transistor is a semiconductor crystal with three doped regions (NPN transistor
or PNP,fig. 1). The three regions are: the emitter, the base, and the collector. The
emitter is heavily doped; its job is to emit, or inject, electrons into the base. The base
is lightly doped and very thin; it passes most of the emitter-injected electrons onto
the collector. The doping level of the collector lies between that of the emitter and
the base.
The transistor is, thus, composed of two pn-junctions. The emitter-base junction
(the emitter junction) and the base-collector junction (the collector junction).
Biasing a transistor
Forward bias is applied on the emitter junction with a value that exceeds the
knee voltage; many free electrons will enter the base, crossing the emitter junction.
These electrons will, then be attracted towards the collector because of its high
positive potential, passing through the collector junction (fig.2). Some of these
electrons will be lost in the base region by recombination with the holes of this
region. This loss is minimized by making the base thin and lightly doped.
So
IE IC+IB with IB being very small it can be said that
IC=IE
Fig 2 is redrawn using the transistor symbol (this circuit is known as the common
base; since the base is common between the two circuits. by the same criteria we can
connect the common emitter (which is the subject of this experiment)(Fig.3) and the
common collector.
The variable parameters of this circuit are: IB.IC.VCE.VBE
The instantaneous value of these variables are :iẞ,ic,VCE, Vbe
The independent variables of these are:iẞ,VCE
The dependent variables are: ic, VBE
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